Epitaxial Growth and Band Structure of Te Film on Graphene

• DOI: 10.1021/acs.nanolett.7b01029
• Publication Date: 2017-06-28T18:30:36Z
• Authors: Xiaochun Huang; Jiaqi Guan; Zijian Lin; Bing Liu; Shuya Xing; Weihua Wang; Jiandong Guo
• Keywords: Condensed Matter - Materials Science; Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; 01 natural sciences; 0104 chemical sciences

Tellurium (Te) films with monolayer and few-layer thickness are obtained by molecular beam epitaxy on a graphene/6H-SiC(0001) substrate investigated in situ scanning tunneling microscopy spectroscopy (STM/STS). We reveal that the Te composed of parallel-arranged helical chains flat-lying graphene surface, exposing (1x1) facet (10-10) bulk crystal. The band gap increases monotonically decreasing thickness, reaching ~0.92 eV for Te. An explicit bending at edge between is visualized. With controlled atomic scale, show potential applications electronics optoelectronics.