Vertically Emitting Indium Phosphide Nanowire Lasers

• DOI: 10.1021/acs.nanolett.8b00334
• Publication Date: 2018-05-21T15:15:48Z
• Authors: Wei-Zong Xu; Fang-Fang Ren; Dimitars Jevtics; Antonio Hurtado; Li Li; Qian Gao; Jiandong Ye; Fan Wang; Benoit Guilhabert; Lan Fu; Hai Lu; Rong Zhang; Hark Hoe Tan; Martin D. Dawson; Chennupati Jagadish
• Keywords: Indium phosphide; Nanophotonics

Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW currently exhibit poor directionality and high threshold gain, issues critically limiting prospects on-chip light sources with extremely reduced footprint efficient power consumption. Here, we propose a new design experimentally demonstrate vertically emitting indium phosphide (InP) laser structure showing emission energy requirements operation. The of the combines an InP integrated in cat's eye (CE) antenna. Thanks to antenna guidance broken asymmetry, strong focusing ability, Q-factor, designed CE-NW higher degree polarization, narrower angle, enhanced internal quantum efficiency, lasing threshold. Hence, this laser–antenna system provides very promising approach toward achievement high-performance lasers, use as highly localized present future nanophotonics systems applications advanced sensing, high-resolution imaging, communications.