Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements

• DOI: 10.1021/acs.nanolett.8b00494
• Publication Date: 2018-04-27T20:16:19Z
• Authors: Gaute Otnes; Enrique Barrigón; Christian Sundvall; K. Erik Svensson; Magnus Heurlin; Gerald Siefer; Lars Samuelson; Ingvar Åberg; Magnus T. Borgström
• Keywords: Nanoprobe; Characterization; Electron beam-induced current

III–V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films have shown impressive performance improvements recent years. To continue this development there is a need for characterization techniques giving quick reliable feedback growth development. Further, which can improve understanding of link between conditions, subsequent processing, cell are desired. Here, we present use nanoprobe system inside scanning electron microscope efficiently contact single nanowires characterize them terms key parameters performance. Specifically, study as-grown InP beam induced current understand charge carrier collection properties, dark current–voltage characteristics diode recombination characteristics. By correlating measurements fully processed array cells, identify how limiting related and/or processing conditions. We achieve more than 7-fold improvement efficiency our grown from different seed particle pattern previously reported group. The best shows certified 15.0%; highest value bottom-up synthesized cell. believe presented approach potential speed-up well other nanowire-based electronic/optoelectronic devices.