Air-Stable Room-Temperature Mid-Infrared Photodetectors Based on hBN/Black Arsenic Phosphorus/hBN Heterostructures

• DOI: 10.1021/acs.nanolett.8b00835
• Publication Date: 2018-03-27T22:32:25Z
• Authors: Shaofan Yuan; Chenfei Shen; Bingchen Deng; Xiaolong Chen; Qiushi Guo; Yuqiang Ma; Ahmad Abbas; Bilu Liu; Ralf Haiges; Claudia Ott; Tom Nilges; Kenji Watanabe; Takashi Taniguchi; Ofer Sinai; Doron Naveh; Chongwu Zhou; Fengnian Xia
• Keywords: Black Phosphorus

Layered black phosphorus (BP) has attracted wide attention for mid-infrared photonics and high-speed electronics, due to its moderate band gap high carrier mobility. However, intrinsic of around 0.33 electronvolt limits the operational wavelength range BP photonic devices based on direct interband transitions 3.7 μm. In this work, we demonstrate that arsenic alloy (b-As xP1- x) formed by introducing into can significantly extend devices. The as-fabricated b-As0.83P0.17 photodetector sandwiched within hexagonal boron nitride (hBN) shows peak extrinsic responsivity 190, 16, 1.2 mA/W at 3.4, 5.0, 7.7 μm room temperature, respectively. Moreover, photoconductive effect dominates photocurrent generation mechanism preservation pristine properties complete hBN encapsulation, these photodetectors exhibit negligible transport hysteresis. broad large photoresponsivity resulting from photoconduction, together with excellent long-term air stability, makes a promising alternative material applications, such as free-space communication, infrared imaging, biomedical sensing.