Nanowire Quantum Dots Tuned to Atomic Resonances
Quantum wire
Electro-absorption modulator
DOI:
10.1021/acs.nanolett.8b03363
Publication Date:
2018-10-15T15:20:46Z
AUTHORS (10)
ABSTRACT
Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages and natural atoms can be combined. Embedding in nanowires boosts these with a set powerful possibilities, such as precise positioning emitters, excellent photon extraction efficiency direct electrical contacting dots. Notably, nanowire structures grown on silicon substrates, allowing for straightforward integration silicon-based photonic devices. In this work we show controlled growth nanowire-quantum-dot silicon, frequency transitions. We grow GaAs AlGaAs nearly pure crystal structure optical properties. precisely control dimensions their position inside demonstrate that emission wavelength engineered over range at least 30 nm around 765 nm. By applying external magnetic field, are able fine-tune our D2 transition 87Rb. use Rb transitions measure actual spectral line width photons emitted from dot 9.4 ± 0.7 μeV, under nonresonant excitation. Our brings highly desirable functionalities technologies, enabling, instance, realization network, based arbitrary number single-photon sources, all operating same transition.
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