Unidirectional Magneto-Resistance in Modulation-Doped Magnetic Topological Insulators

• DOI: 10.1021/acs.nanolett.8b03702
• Publication Date: 2019-01-28T09:32:12Z
• Authors: Yabin Fan; Qiming Shao; Lei Pan; Xiaoyu Che; Qinglin He; Gen Yin; Cheng Zheng; Guoqiang Yu; Tianxiao Nie; Massoud R. Masir; Allan H. MacDonald; Kang L. Wang
• Keywords: Topological insulator; Magnetism

Nonlinear unidirectional spin Hall magnetoresistance (USMR) has been reported in heavy metal/ferromagnet bilayers, which could be employed as an effective method detecting the magnetization orientation spintronic devices with two-terminal geometry. Recently, another (UMR) was magnetic topological insulator (TI)-based heterostructures at cryogenic temperature, whose amplitude is orders of magnitude larger than USMR measured metal-based room temperature. Here, we report UMR effect modulation-doped TI structures. This arises due to interplay between dopant's and current-induced surface polarization, when they are parallel or antiparallel each other material. By varying position structure, reveal that mainly originating from interaction spin-polarized carriers (not bulk carriers). Furthermore, field-, angular rotation-, temperature-dependence, highlight correlation magnetism The large versus current ratio TI-based bilayers promises easy readout