Gate Switching of Ultrafast Photoluminescence in Graphene

0103 physical sciences 02 engineering and technology 0210 nano-technology 01 natural sciences 7. Clean energy
DOI: 10.1021/acs.nanolett.8b03967 Publication Date: 2018-11-19T15:40:25Z
ABSTRACT
The control of optical properties by electric means is the key to optoelectronic applications. For atomically thin two-dimensional (2D) materials, natural advantage lies in that carrier doping could be readily controlled through gating effect, possibly affecting properties. Exploiting this advantage, here we report gate switching ultrafast upconverted photoluminescence from monolayer graphene. luminescence can completely switched off Pauli-blocking one-photon interband transition graphene with an on/off ratio exceeding 100, which remarkable compared other 2D semiconductors and 3D bulk counterparts. chemical potential pump fluence dependences are nicely described a two-temperature model, including both hot dynamics carrier-optical phonon interaction. This switchable background-free open up new opportunities for graphene-based
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