Gate Switching of Ultrafast Photoluminescence in Graphene

• DOI: 10.1021/acs.nanolett.8b03967
• Publication Date: 2018-11-19T15:40:25Z
• Authors: Di Huang; Tao Jiang; Yu Zhang; Yuwei Shan; Xiaodong Fan; Zhihong Zhang; Yunyun Dai; Lei Shi; Kaihui Liu; Changgan Zeng; Jian Zi; Wei-Tao Liu; Shiwei Wu
• Keywords: 0103 physical sciences; 02 engineering and technology; 0210 nano-technology; 01 natural sciences; 7. Clean energy

The control of optical properties by electric means is the key to optoelectronic applications. For atomically thin two-dimensional (2D) materials, the natural advantage lies in that the carrier doping could be readily controlled through the electric gating effect, possibly affecting the optical properties. Exploiting this advantage, here we report the gate switching of the ultrafast upconverted photoluminescence from monolayer graphene. The luminescence can be completely switched off by the Pauli-blocking of one-photon interband transition in graphene with an on/off ratio exceeding 100, which is remarkable compared to other 2D semiconductors and 3D bulk counterparts. The chemical potential and pump fluence dependences of the luminescence are nicely described by a two-temperature model, including both the hot carrier dynamics and carrier-optical phonon interaction. This gate switchable and background-free photoluminescence can open up new opportunities for graphene-based ultrafast optoelectronic applications.