Gate Switching of Ultrafast Photoluminescence in Graphene

• DOI: 10.1021/acs.nanolett.8b03967
• Publication Date: 2018-11-19T15:40:25Z
• Authors: Di Huang; Tao Jiang; Yu Zhang; Yuwei Shan; Xiaodong Fan; Zhihong Zhang; Yunyun Dai; Lei Shi; Kaihui Liu; Changgan Zeng; Jian Zi; Wei-Tao Liu; Shiwei Wu
• Keywords: 0103 physical sciences; 02 engineering and technology; 0210 nano-technology; 01 natural sciences; 7. Clean energy

The control of optical properties by electric means is the key to optoelectronic applications. For atomically thin two-dimensional (2D) materials, natural advantage lies in that carrier doping could be readily controlled through gating effect, possibly affecting properties. Exploiting this advantage, here we report gate switching ultrafast upconverted photoluminescence from monolayer graphene. luminescence can completely switched off Pauli-blocking one-photon interband transition graphene with an on/off ratio exceeding 100, which remarkable compared other 2D semiconductors and 3D bulk counterparts. chemical potential pump fluence dependences are nicely described a two-temperature model, including both hot dynamics carrier-optical phonon interaction. This switchable background-free open up new opportunities for graphene-based