Hydrogen-Terminated Diamond MOSFETs Using Ultrathin Glassy Ga2O3 Dielectric Formed by Low-Temperature Liquid Metal Printing Method

• DOI: 10.1021/acsaelm.2c00093
• Publication Date: 2022-04-28T20:48:05Z
• Authors: Kaijian Xing; Patjaree Aukarase...; Sergey Rubanov; Ali Zavabeti; Daniel L. Creedon; Wei Li; Brett C. Johnson; Christopher I. Pakes; Jeffrey C. McCallum; Torben Daeneke; Dong-Chen Qi
• Keywords: gallium oxide; liquid metal technology; MOSFETs; 0103 physical sciences; hydrogen-terminated diamond; 540; 530; 01 natural sciences; 2D dielectric

The p-type surface conductivity of hydrogen-terminated diamond (H-diamond) provides a viable approach toward diamond-based wide-bandgap metal-oxide-semiconductor field-effect transistors (MOSFETs) for high-power and high-frequency electronics. A facile, low-cost, low-temperature method to form gate dielectrics on that also preserves the integrity hydrogen-termination is highly desirable high-performance electronics with process flexibility high yield. In this work, we demonstrate p-channel MOSFET an ultrathin glassy Ga2O3 dielectric layer derived from liquid metal. metal printing was employed transfer amorphous over desired active region H-diamond at low temperature, allowing protection preservation while forming efficient dielectric. results work suggest can provide efficient, high-yield pathway high-quality transistors.