Direct Multitier Synthesis of Two-Dimensional Semiconductor 2H-MoTe2

• DOI: 10.1021/acsaelm.2c01260
• Publication Date: 2022-11-30T19:39:26Z
• Authors: Yu Pan; Yiwen Song; Qi Wang; Tingting Wang; Yanping Li; Wanjin Xu; Yu Ye
• Keywords: Compound semiconductor; Deposition

Two-dimensional (2D) 2H-MoTe2 is an emerging semiconductor with promising electronic and optoelectronic properties. Meanwhile, the in-plane 2D epitaxy mechanism via 1T′ to 2H phase transition allows synthesis of on arbitrary surfaces. Here, we demonstrate two routes for tier-by-tier growth one-step synthesize multitier isolated by atomic layer deposition aluminum oxide (Al2O3). Raman, scanning transmission electron microscopy, other characterizations show that periodic 2H-MoTe2/Al2O3 multilayer structure exhibits characteristics large-area preparation high crystallinity. Our direct move first step toward realizing 3D-ICs nonvolatile memories based semiconducting 2H-MoTe2.