High Performance Indium-Tin-Zinc-Oxide Thin-Film Transistor with Hexamethyldisilazane Passivation

• DOI: 10.1021/acsaelm.4c00100
• Publication Date: 2024-04-11T01:39:53Z
• Authors: Xinkai Sun; Jae-Hoon Han; Zhenyuan Xiao; Simin Chen; Taewon Jin; Taehyeon Noh; Seoungmin Park; Jaekyun Kim; Jidong Jin; Younghyun Kim
• Keywords: Passivation; Oxide thin-film transistor; Indium tin oxide

In this work, the fabrication and characterization of high performance indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs) with hexamethyldisilazane (HMDS) passivation are presented. The incorporation HMDS significantly enhances electrical bias stress stability ITZO TFTs compared those without passivation. X-ray photoelectron spectroscopy measurements reveal that offer distinct advantages over passivation, including an increased concentration metal oxide a reduced oxygen vacancies hydroxyl groups in active channel layer. As result, exhibit saturation mobility 26.15 ± 1.14 cm2·V–1·s–1, subthreshold swing 0.26 0.04 V·dec–1, on/off current ratio 9 × 108, excellent operational when to