Nanoscale Rear-Interface Passivation in Cu2ZnSn(S,Se)4 Solar Cells through the CuAlO2 Intermediate Layer

Passivation Deposition Equivalent series resistance
DOI: 10.1021/acsaem.1c00743 Publication Date: 2021-04-25T18:09:14Z
ABSTRACT
The present work demonstrates that the addition of p-type CuAlO2 (CAO) as an intermediate layer between molybdenum (Mo) and absorber rear interface efficiently improves Cu2ZnSn(S,Se)4 (CZTSSe) device performance. efficacy is analyzed through sputtering CAO nanolayer at different deposition times on top Mo layer. ultrathin improved bulk quality with formation compact larger crystalline grains. Furthermore, CZTSSe optimum time (154 s) successfully reduced Mo(S,Se)2 thickness from ∼50 to ∼25 nm. This results in series resistance (Rs) providing improvement overall short-circuit current density (JSC) power conversion efficiency increased 33.48 35.40 mA/cm2 9.61 10.54%, respectively, compared a reference device.
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