Nanoscale Rear-Interface Passivation in Cu2ZnSn(S,Se)4 Solar Cells through the CuAlO2 Intermediate Layer

• DOI: 10.1021/acsaem.1c00743
• Publication Date: 2021-04-25T18:09:14Z
• Authors: Kuldeep Singh Gour; Vijay Karade; Jun Sung Jang; Eunae Jo; Pravin Babar; Sumit Korade; Hyesun Yoo; Sugil Kim; Dongmyung Kim; Jongsung Park; Jin Hyeok Kim
• Keywords: Passivation; Deposition; Equivalent series resistance

The present work demonstrates that the addition of p-type CuAlO2 (CAO) as an intermediate layer between molybdenum (Mo) and absorber rear interface efficiently improves Cu2ZnSn(S,Se)4 (CZTSSe) device performance. efficacy is analyzed through sputtering CAO nanolayer at different deposition times on top Mo layer. ultrathin improved bulk quality with formation compact larger crystalline grains. Furthermore, CZTSSe optimum time (154 s) successfully reduced Mo(S,Se)2 thickness from ∼50 to ∼25 nm. This results in series resistance (Rs) providing improvement overall short-circuit current density (JSC) power conversion efficiency increased 33.48 35.40 mA/cm2 9.61 10.54%, respectively, compared a reference device.