Mixed-Dimensional Van der Waals Heterostructure Photodetector

• DOI: 10.1021/acsami.0c01076
• Publication Date: 2020-03-25T13:52:20Z
• Authors: Jiaoyan Zhou; Mingzhang Xie; Huan Ji; Anyang Cui; Yan Ye; Kai Jiang; Liyan Shang; Jinzhong Zhang; Zhigao Hu; Junhao Chu
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

Van der Waals (vdW) heterostructures, integrated two-dimensional (2D) materials with various functional materials, provide a distinctive platform for next-generation optoelectronics unique flexibility and high performance. However, exploring the vdW heterostructures combined strongly correlated electronic is hitherto rare. Herein, novel temperature-sensitive photodetector based on GaSe/VO2 mixed-dimensional heterostructure discovered. Compared previous devices, our exhibits excellent enhanced performance, an external quantum efficiency of up to 109.6% highest responsivity (358.1 mA·W-1) under 405 nm laser. Interestingly, we show that overcomes limitation single material interaction between VO2 GaSe, where photoresponse highly sensitive temperature can be further vanished at critical value. The metal-insulator transition VO2, which controls peculiar band-structure evolution across heterointerface, demonstrated manipulate variation. This study enables us elucidate method manipulating 2D by paving way developing high-performance special optoelectronic applications.