Universal Limit for Air-Stable Molecular n-Doping in Organic Semiconductors

• DOI: 10.1021/acsami.0c04380
• Publication Date: 2020-08-04T12:38:52Z
• Authors: Martin Schwarze; Max L. Tietze; Frank Ortmann; Hans Kleemann; Karl Leo
• Keywords: Organic semiconductor

The air sensitivity of n-doped layers is crucial for the long-term stability organic electronic devices. Although several air-stable and highly efficient n-dopants have been developed, reason varying between different layers, in which n-dopant molecules are dispersed, not fully understood. In contrast to previous studies that compared doped films with energy levels neat host or dopant we trace back degree integer charge transfer states (ICTCs) formed by anions cations. Our data indicate a universal limit ionization ICTCs above semiconductors air-stable.