Dopant Concentration Controls Quasi-Static Electrostrictive Strain Response of Ceria Ceramics
elastic moduli
nanoindentation
anelasticity
Materials Engineering
02 engineering and technology
530
electrostriction
620
Physical sciences
Engineering
primary creep
Chemical sciences
Chemical Sciences
point defects
ultrasonic time of flight
doped ceria
Nanoscience & Nanotechnology
0210 nano-technology
DOI:
10.1021/acsami.0c07799
Publication Date:
2020-07-23T21:19:37Z
AUTHORS (7)
ABSTRACT
Electromechanically active ceramic materials, piezoelectrics and electrostrictors, provide the backbone of a variety of consumer technologies. Gd- and Sm-doped ceria are ion conducting ceramics, finding application in fuel cells, oxygen sensors, and, potentially, as memristor materials. While optimal design of ceria-based devices requires a thorough understanding of their mechanical and electromechanical properties, reports of systematic study of the effect of dopant concentration on the electromechanical behavior of ceria-based ceramics are lacking. Here we report the longitudinal electrostriction strain coefficient (M33) of dense RExCe1-xO2-x/2 (x ≤ 0.25) ceramic pellets, where RE = Gd or Sm, measured under ambient conditions as a function of dopant concentration within the frequency range f = 0.15-350 Hz and electric field amplitude E ≤ 0.5 MV/m. For >100 Hz, all ceramic pellets tested, independent of dopant concentration, exhibit longitudinal electrostriction strain coefficient with magnitude on the order of 10-18 m2/V2. The quasi-static (f < 1 Hz) electrostriction strain coefficient for undoped ceria is comparable in magnitude, while introducing 5 mol % Gd or 5 mol % Sm produces an increase in M33 by up to 2 orders of magnitude. For x ≤ 0.1 (Gd)-0.15 (Sm), the Debye-type relaxation time constant (τ) is in the range 60-300 ms. The inverse relationship between dopant concentration and quasi-static electrostrictive strain parallels the anelasticity and ionic conductivity of Gd- and Sm-doped ceria ceramics, indicating that electrostriction is partially governed by ordering of vacancies and changes in local symmetry.
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