Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3–xClx Perovskite for RRAM Application

• DOI: 10.1021/acsami.0c10123
• Publication Date: 2020-08-24T14:19:11Z
• Authors: Ujjal Das; Dip Das; Bappi Paul; Tridip Rabha; Soumya Pattanayak; Aloke Kanjilal; Snigdha Bhattacha...; Pranab Sarkar; Asim Roy
• Keywords: Resistive touchscreen

Halide perovskite (HP) materials are actively researched for resistive switching (RS) memory devices due to their current-voltage hysteresis along with low-temperature processability, superior charge mobility, and simple fabrication. In this study, all-inorganic RbPbI3 has been doped Cl in the halide site incorporated as a media Ag/RbPbI3-xClx/ITO structure, since pure is nonswitchable. Five compositions of RbPbI3-xClx (x = 0, 0.3, 0.6, 0.9, 1.2) films fabricated, conductivity was found be increasing upon increase concentration, revealed by dielectric I-V measurements. The device 20% chloride-substituted film exhibits higher on/off ratio, extended endurance, long retention, high-density storage ability. Finally, plausible explanation mechanism from iodine vacancy-mediated growth conducting filaments (CFs) provided using conductive atomic force microscopy (c-AFM). c-AFM measurements reveal that insulating nature, whereas Cl-doped demonstrate behavior.