A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe2-WSe2 Homojunction

• DOI: 10.1021/acsami.0c11456
• Publication Date: 2020-09-10T10:20:06Z
• Authors: Chaoyang Tan; Huanhuan Wang; Xiangde Zhu; Wenshuai Gao; Hui Li; Jiawang Chen; Gang Li; Lijie Chen; Junmin Xu; Xiaozong Hu; Liang Li; Tianyou Zhai
• Keywords: Homojunction

Lateral homojunctions made of two-dimensional (2D) layered materials are promising for optoelectronic and electronic applications. Here, we report the lateral WSe2-WSe2 homojunction photodiodes formed spontaneously by thickness modulation in which there unique band structures a unilateral depletion region. The electrically tunable junctions can be switched from n-n to p-p diodes, corresponding rectification ratio increases about 1 1.2 × 104. In addition, an obvious photovoltaic behavior is observed at zero gate voltage, exhibits large open voltage 0.49 V short-circuit current 0.125 nA under visible light irradiation. due region, diode achieve high detectivity 4.4 1010 Jones fast photoresponse speed 0.18 ms Vg = 0 Vds 0. studies not only demonstrated great potential self-power photodetector but also allowed development other functional devices, such as nonvolatile programmable logic rectifiers.