Thin-Film Engineering of Solution-Processable n-Type Silicon Phthalocyanines for Organic Thin-Film Transistors

• DOI: 10.1021/acsami.0c17657
• Publication Date: 2020-12-28T20:50:28Z
• Authors: Rosemary R. Cranston; Mário C. Vebber; Jônatas Faleiro B...; Nicole A. Rice; Claire Tonnelé; Zachary J. Comeau; Nicholas T. Boileau; Jaclyn L. Brusso; Adam J. Shuhendler; Frédéric Castet; Luca Muccioli; Timothy L. Kelly; Benoît H. Lessard
• Keywords: Spin Coating; Organic semiconductor

Metal and metalloid phthalocyanines are an abundant established class of materials widely used in the dye pigment industry as well commercial photoreceptors. Silicon (SiPcs) among highest-performing n-type semiconductor this family when organic thin-film transistors (OTFTs) their performance solid-state arrangement often increased through axial substitution. Herein, we study eight axially substituted SiPcs integration into solution-processed OTFTs. Electrical characterization OTFTs, combined with atomic force microscopy (AFM), determined that length alkyl chain affects device morphology. The effects high-temperature annealing spin coating time on film formation, two key processing steps for fabrication were investigated by grazing-incidence wide-angle X-ray scattering (GIWAXS) diffraction (XRD) to elucidate relationship between microstructure performance. Thermal was shown change both crystallinity SiPc molecular orientation relative substrate surface. Spin affected crystallinity, morphology, interplanar d-spacing, thus ultimately modifying Of studied, bis(tri-n-butylsilyl oxide) exhibited greatest electron field-effect mobility (0.028 cm2 V–1 s–1, a threshold voltage 17.6 V) all reported derivatives.