Engineering the Threshold Switching Response of Nb2O5-Based Memristors by Ti Doping

• DOI: 10.1021/acsami.0c19544
• Publication Date: 2021-01-09T07:41:41Z
• Authors: Shimul Kanti Nath; Sanjoy Kumar Nandi; Thomas Ratcliff; Robert Glen Elliman
• Keywords: Memristor; Neuromorphic engineering; Hysteresis

Two terminal metal–oxide–metal devices based on niobium oxide thin films exhibit a wide range of non-linear electrical characteristics that have applications in hardware-based neuromorphic computing. In this study, we compare the threshold-switching and current-controlled negative differential resistance (NDR) cross-point fabricated from undoped Nb2O5 Ti-doped show doping offers an effective means engineering device response for particular applications. particular, is shown to improve reliability provide tuning threshold hold voltages, hysteresis window, magnitude resistance. Based temperature-dependent current–voltage lumped-element modelling, these effects are attributed doping-induced reductions its rate change with temperature (i.e., thermal activation energy conduction). Significantly, studies also critical required NDR, providing characteristics. These results afford improved understanding physical mechanisms responsible switching new insights designing specific