Conductive, Large-Area, and Continuous 7,7,8,8-Tetracyanoquinodimethane@HKUST-1 Thin Films Fabricated Using Solution Shearing

• DOI: 10.1021/acsami.1c00640
• Publication Date: 2021-02-19T14:12:21Z
• Authors: Sangeun Jung; Luke Huelsenbeck; Qikun Hu; Sean Robinson; Gaurav Giri
• Keywords: Tetracyanoquinodimethane; Shearing (physics)

Most metal–organic frameworks (MOFs) have an insulating nature due to their porosity and redox-inactive organic components. The electrical conductivity of the prototypical MOF, HKUST-1, can be tuned by infiltrating a small-molecule semiconductor, 7,7,8,8-tetracyanoquinodimethane (TCNQ), into HKUST-1 pores, creating TCNQ@HKUST-1. However, current processes TCNQ@HKUST-1 films many roadblocks such as slow crystallization rates, which limit high throughput production, formation Cu(TCNQ) byproduct, affects degrades chemical structure HKUST-1. In this work, we show that rapidly synthesized over large areas with consistent thickness no pinholes via meniscus-guided coating technique called solution shearing. subsequent pore activation process TCNQ impregnation completed solvent exchange minimize obtain increase in solution-sheared thin 7 orders magnitude, reaching maximum value 2.42 × 10–2 S m–1 when is incorporated for 10 days. higher compared formed high-pressure pelletization We shearing produce large-area reduce grain boundaries better than pelletization, allowing electronics both charge transport applications sensors electronics.