Interfacial Engineering of Cu2O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al2O3 Passivation Layer

• DOI: 10.1021/acsami.1c08258
• Publication Date: 2021-06-14T07:10:54Z
• Authors: Le Li; Guanlin Du; Xi Zhou; Yinyue Lin; Yuanwei Jiang; Xingyu Gao; Linfeng Lu; Gang Li; Wei Zhang; Qiang Feng; Jilei Wang; Liyou Yang; Dongdong Li
• Keywords: Passivation; Diffusion barrier; Carrier lifetime

Passivating contacts that simultaneously promote carrier selectivity and suppress surface recombination are considered as a promising trend in the crystalline silicon (c-Si) photovoltaic industry. In this work, efficient p-type c-Si (p-Si) solar cells with cuprous oxide (Cu2O) hole-selective demonstrated. The direct p-Si/Cu2O contact leads to substoichiometric SiOx interlayer diffusion of Cu into substrate, which would generate deep-level impurity behaving centers. An Al2O3 layer is subsequently employed at interface, not only serves passivating tunneling but also suppresses redox reaction Si/Cu2O interface. conjunction high work function Au superior optical property Ag, power conversion efficiency up 19.71% achieved p-Si/Al2O3/Cu2O/Au/Ag rear contact. This provides strategy for reducing interfacial defects lowering energy barrier height cells.