Quasi-Vertically Oriented Sb2Se3 Thin-Film Solar Cells with Open-Circuit Voltage Exceeding 500 mV Prepared via Close-Space Sublimation and Selenization

• DOI: 10.1021/acsami.1c13223
• Publication Date: 2021-09-27T21:32:35Z
• Authors: Ping Fan; Guo-Jie Chen; Shuo Chen; Zhuang-Hao Zheng; Muhammad Azam; Nafees Ahmad; Zheng-Hua Su; Guang-Xing Liang; Xiang-Hua Zhang; Zhi-Gang Chen
• Keywords: Sublimation; Open-circuit voltage; Passivation

Sb2Se3, one of the most desirable absorption materials for next-generation thin-film solar cells, has an excellent photovoltaic characteristic. The [hk1]-oriented (quasi-vertically oriented) Sb2Se3 thin film is more beneficial promoting efficient carrier transport than [hk0]-oriented film. Controlling orientation remains main obstacle to further improvement in efficiency Sb2Se3-based cells. In this work, controlled [hk0] or [hk1] precursor readily adjusted by tuning substrate temperature and distance between source sample close-space sublimation (CSS). Well-crystallized stoichiometric films with desired large crystal grains are successfully prepared after selenization. cells a configuration glass/Mo/Sb2Se3/CdS/ITO/Ag fabricated power conversion 4.86% record open-circuit voltage (VOC) 509 mV. significant VOC closely related quasi-vertically oriented absorber layer reduced deep-level defect density bulk passivation at Sb2Se3/CdS heterojunction. This work indicates that CSS selenization show remarkable potential fabrication high-efficiency