Advances in RF Glow Discharge Optical Emission Spectrometry Characterization of Intrinsic and Boron-Doped Diamond Coatings
Glow discharge
Rietveld Refinement
DOI:
10.1021/acsami.1c20785
Publication Date:
2022-01-25T18:48:56Z
AUTHORS (6)
ABSTRACT
Accurate determination of the effective doping range within diamond thin films is important for fine-tuning electrical conductivity. Nevertheless, it not easily attainable by commonly adopted techniques. In this work, pulsed RF glow discharge optical emission spectrometry (GD-OES) combined with ultrafast sputtering (UFS) applied first time to acquire elemental depth profiles intrinsic coatings and boron content bulk distribution in films. The GD-OES practical advances presented here enabled quick profiling noteworthy resolution film interfaces. erosion rates layer thicknesses were measured using differential interferometric (DIP), demonstrating a close correlation between coating thickness carbon/hydrogen gas ratio. Moreover, DIP semiquantification methodology revealed nonhomogeneous crystalline structure, i.e., both substitutional interstitial framework. measurements also showed that linearly correlated increasing introduced into coating. This finding well supported X-ray diffraction (XRD) Rietveld refinement photoelectron spectroscopy (XPS). work demonstrates advantage applying advanced operation modes due its ease use, affordability, accuracy, high-speed profile analysis capability.
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