Large Photomultiplication by Charge-Self-Trapping for High-Response Quantum Dot Infrared Photodetectors

• DOI: 10.1021/acsami.2c01046
• Publication Date: 2022-03-15T20:54:31Z
• Authors: Kaimin Xu; Liang Ke; Hongbin Dou; Rui Xu; Wenjia Zhou; Qi Wei; Xinzuo Sun; Hao Wang; Haobo Wu; Lin Li; Jiamin Xue; Baile Chen; Tsu-Chien Weng; Li Zheng; Yuehui Yu; Zhijun Ning
• Keywords: Charge carrier; Photodiode; Specific detectivity; Quantum Efficiency

PbS colloidal quantum dots (CQDs) are emerging as promising candidates for next-generation, low-cost, and high-performance infrared photodetectors. Recently, photomultiplication has been explored to improve the detectivity of CQD photodetectors by doping charge-trapping material into a matrix. However, this relies on remote that could influence carrier transfer giving rise limited photomultiplication. Herein, charge-self-trapped ZnO layer is prepared surface reaction between acid ZnO. Photogenerated electrons trapped oxygen vacancy defects at generate strong interfacial electrical field induce large extremely low bias. A photodiode based structure shows response (R) 77.0 A·W-1 specific 1.5 × 1011 Jones 1550 nm under -0.3 V This self-trapped can be applied other such perovskite-based devices.