Peel-and-Stick Integration of Atomically Thin Nonlayered PtS Semiconductors for Multidimensionally Stretchable Electronic Devices
02 engineering and technology
0210 nano-technology
DOI:
10.1021/acsami.2c02766
Publication Date:
2022-04-20T13:59:17Z
AUTHORS (15)
ABSTRACT
Various near-atom-thickness two-dimensional (2D) van der Waals (vdW) crystals with unparalleled electromechanical properties have been explored for transformative devices. Currently, the availability of 2D vdW is rather limited in nature as they are only obtained from certain mother intrinsically possessed layered crystallinity and anisotropic molecular bonding. Recent efforts to transform conventionally non-vdW three-dimensional (3D) into ultrathin 2D-like structures seen rapid developments explore device building blocks unique form factors. Herein, we a "peel-and-stick" approach, where nonlayered 3D platinum sulfide (PtS) crystal, traditionally known cooperate mineral material, transformed freestanding membrane applications. The (∼10 nm) PtS films grown on large-area (>cm2) silicon dioxide/silicon (SiO2/Si) wafers precisely "peeled" inside water retaining desired geometries via capillary-force-driven surface wettability control. Subsequently, "sticked" strain-engineered patterned substrates presenting prominent semiconducting properties, i.e., p-type transport an optical band gap ∼1.24 eV. A variety mechanically deformable strain-invariant electronic devices demonstrated by this peel-and-stick method, including biaxially stretchable photodetectors respiratory sensing face masks. This study offers new opportunities emerging reconfigurable technologies.
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