Friction-Dominated Carrier Excitation and Transport Mechanism for GaN-Based Direct-Current Triboelectric Nanogenerators

• DOI: 10.1021/acsami.2c03853
• Publication Date: 2022-05-16T13:46:56Z
• Authors: Yunkang Chen; Zhi Zhang; Zhaozheng Wang; Tianzhao Bu; Sicheng Dong; Wenwang Wei; Zhiqiang Chen; Yuan Lin; Yi Lv; Han Zhou; Wenhong Sun; Chi Zhang
• Keywords: Nanogenerator

The semiconductor triboelectric nanogenerator (TENG) based on the tribovoltaic effect has characteristics of direct current and high density, but energy transfer conversion mechanism is not completely clear. Here, a series gallium nitride (GaN)-based direct-current TENGs (SDC-TENGs) are investigated for clarifying carrier excitation transport mechanism. During friction process, external output always flows from GaN to silicon or aluminum, regardless direction built-in electric field, because types. These results reveal that dominated by interfacial field formed triboelectrification, which also verified under different bias voltages. Moreover, dependent frictional force have been systematically normal forces modes. open-circuit voltage short-circuit SDC-TENG both increased with larger force, shows more severe in interface excited carriers. maximum can reach 25 V lighting up LEDs, enhanced four times compared cutting-edge reported SDC-TENGs. This work clarified friction-dominated effect, demonstrates great potential materials recovery utilization.