Few-Layered MnAl2S4 Dielectrics for High-Performance van der Waals Stacked Transistors

• DOI: 10.1021/acsami.2c04477
• Publication Date: 2022-05-24T08:16:21Z
• Authors: Fang Xu; Ziyu Wu; Guangjian Liu; Feng Chen; Junqing Guo; Hua Zhou; Jiawei Huang; Zhouyang Zhang; Linfeng Fei; Xiaxia Liao; Yangbo Zhou
• Keywords: 0301 basic medicine; 03 medical and health sciences

The gate dielectric layer is an important component in building a field-effect transistor. Here, we report the synthesis of layered rhombohedral-structured MnAl2S4 crystal, which can be mechanically exfoliated down to monolayer limit. properties few-layered flakes are systematically investigated, whereby they exhibit relative constant over 6 and electric breakdown field around 3.9 MV/cm. atomically smooth thin then applied as top realize two-dimensional van der Waals stacked transistor, uses MoS2 channel material. fabricated transistor operated at small drain-source voltage 0.1 V voltages within ranges ±2 V, large on-off ratio 107 0.5 low subthreshold swing value 80 mV/dec. Our work demonstrates that high-performance transistors, thus broadens research on high-κ 2D materials may provide new opportunities developing low-dimensional electronic devices with power consumption future.