Ultrasensitive Flexible κ-Phase Ga2O3 Solar-Blind Photodetector

• DOI: 10.1021/acsami.2c06550
• Publication Date: 2022-07-22T22:59:53Z
• Authors: Yi Lu; Shibin Krishna; Xiao Tang; Wedyan Babatain; Mohamed Ben Hassine; Che-Hao Liao; Na Xiao; Zhiyuan Liu; Xiaohang Li
• Keywords: Quantum Efficiency; Specific detectivity; Biasing

Flexible Ga2O3 photodetectors have attracted considerable interest owing to their potential use in the development of implantable, foldable, and wearable optoelectronics. In particular, β-phase has been most widely investigated due highest thermodynamic stability. However, high-quality relies on ultrahigh crystallization temperature (usually ≥750 °C), beyond thermal tolerance flexible substrates. this work, we epitaxially grow a metastable κ-phase (002) thin film mica (001) substrate under 680 °C develop κ-Ga2O3 photodetector with performance. Epitaxial are maintained be thermally stable up 750 °C, suggesting for harsh environment applications. The responsivity, on/off ratio, detectivity, external quantum efficiency fabricated 703 A/W, 1.66 × 107, 4.08 1014 Jones, 3.49 105 %, respectively, 250 nm incident light 20 V bias voltage. These values record-high reported date photodetectors. Furthermore, shows robust flexibility bending radii 1, 2, 3 cm. More importantly, it strong mechanical stability against 10,000 test cycles. results reveal significance grown heteroepitaxially substrate, especially its future solar-blind detection systems.