Room-Temperature Fabrication of p-Type SnO Semiconductors Using Ion-Beam-Assisted Deposition

• DOI: 10.1021/acsami.2c12617
• Publication Date: 2022-10-07T04:27:14Z
• Authors: Mochamad Januar; Suhendro Purbo Pr...; Chia-Wen Zhong; Horng-Chih Lin; Chuan Li; Jang-Hsing Hsieh; Kuo-Kang Liu; Kou-Chen Liu
• Keywords: 02 engineering and technology; 0210 nano-technology

Over the past decade, SnO has been considered a promising p-type oxide semiconductor. However, achieving high mobility in fabrication of films is still highly dependent on post-annealing procedure, which often used to make SnO, due its metastable nature, readily convertible SnO2 and/or intermediate phases. This paper demonstrates fully room-temperature SnOx thin using ion-beam-assisted deposition. technique offers independent control between ion density, via ion-gun anode current and oxygen flow rate, energy, voltage, thus being able optimize optical band gap hole reach 2.70 eV 7.89 cm2 V-1 s-1, respectively, without need for annealing. Remarkably, this highest reported whose was carried out entirely at room temperature. Using first-principles calculations, we rationalize that associated with fine-tuning Sn-rich-related defects lattice densification, obtained by controlling density energy ions, both spatial overlap valence bands form continuous conduction path holes. Moreover, absence annealing process, Raman spectra reveal no significant signatures microcrystal formation films. behavior contrasts case involving air-annealing where complex interaction occurs microcrystals interplay results variations grain texture within film, leading lower optimum Hall only 5.17 s-1. Finally, demonstrate rectification characteristics all-fabricated-at-room-temperature SnOx-based p-n devices confirm viability