Transferable Ga2O3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation

• DOI: 10.1021/acsami.2c14661
• Publication Date: 2022-10-14T23:36:01Z
• Authors: Yi Lu; Shibin Krishna; Che-Hao Liao; Ziqiang Yang; Mritunjay Kumar; Zhiyuan Liu; Xiao Tang; Na Xiao; Mohamed Ben Hassine; Sigurdur T. Thoro...; Xiaohang Li
• Keywords: Exfoliation joint; Ohmic contact; Flexible Electronics

Transferable Ga2O3 thin film membrane is desirable for vertical and flexible solar-blind photonics high-power electronics applications. However, epitaxially grown on rigid substrates such as sapphire, Si, SiC hinders its exfoliation due to the strong covalent bond between substrates, determining lateral device configuration also hardly reaching ever-increasing demand wearable foldable Mica substrate, which has an atomic-level flat surface high-temperature tolerance, could be a good candidate van der Waals (vdW) epitaxy of crystalline membrane. Beyond that, benefiting from weak vdW mica in this work, exfoliated transferred arbitrary adhesive tape, allowing electronic configuration. This straightforward method verified consistent reproducible by transfer characterization thick (∼380 nm)/thin (∼95 nm) κ-phase conductive n-type β-Ga2O3. Vertical photodetectors are fabricated based membrane, denoting peak response at ∼250 nm. Through integration Ti/Au Ohmic contact Ni/Ag Schottky electrode, photodetector exhibits self-powered photodetection behavior with responsivity 17 mA/W under zero bias. The vdW-bond-assisted demonstrated here provide enormous opportunities pursuit electronics.