Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million

• DOI: 10.1021/acsami.3c03294
• Publication Date: 2023-05-11T13:47:49Z
• Authors: Zhenzhen Kong; Zonghu Li; Gang Cao; Jiale Su; Yiwen Zhang; Jinbiao Liu; Jingxiong Liu; Yuhui Ren; Huihui Li; Laiming Wei; Guo-ping Guo; Yuanyuan Wu; Henry H. Radamson; Junfeng Li; Zhenhua Wu; Hai-ou Li; Jiecheng Yang; Chao Zhao; Tianchun Ye; Guilei Wang
• Keywords: Electron Mobility

We develop a method to fabricate an undoped Ge quantum well (QW) under 32 nm relaxed Si0.2Ge0.8 shallow barrier. The bottom barrier contains (650 °C) and Si0.1Ge0.9 (800 such that variation of content forms sharp interface can suppress the threading dislocation density (TDD) penetrating into well. SiGe introduces enough in-plane parallel strain (ε∥ -0.41%) in heterostructure field-effect transistors with buried channel obtain ultrahigh two-dimensional hole gas (2DHG) mobility over 2 × 106 cm2/(V s) very low percolation (5.689 ± 0.062) 1010 cm-2. fractional indication is also observed at high magnetic fields. This strained germanium as noise mitigation material provides platform for integration computation long coherence time fast all-electrical manipulation.