Contact Engineering of III-Nitrides and Metal Schemes toward Efficient Deep-Ultraviolet Light-Emitting Diodes

• DOI: 10.1021/acsami.3c15303
• Publication Date: 2024-01-24T20:24:35Z
• Authors: Xiaoyu Zhao; Ke Sun; Zhenxing Lv; Zhefu Liao; Sheng Liu; Shengjun Zhou
• Keywords: Contact resistance

Throughout the development of III-nitride electronic and optoelectronic devices, electrically interfacing semiconductors metal schemes has been a long-standing issue that determines contact resistance operation voltage, which are tightly associated with device performance stability. Compared to main research focus crystal quality semiconductors, equally important interface between III-nitrides received relatively less attention. Here, we demonstrate comprehensive engineering strategy realize low Al-rich n-AlGaN via pretreatment scheme optimization. Prior deposition, introduction CHF3 treatment is conducive substantial reduction, effect becoming more distinct by prolonging time. Furthermore, compare different schemes, namely, Ti/Al/Ti/Au, Ti/Al/Ti/Pt/Au, Cr/Ti/Al/Ti/Pt/Au, form electrical on n-AlGaN. From microscale analysis based multiple characterization methods, reveal correlation properties nature interface, attributing improvement low-resistance Pt- Cr-related alloy formation. Under circumstance no efforts have devoted optimizing epitaxial growth, metal–semiconductor alone leads value 8.96 × 10–5 Ω·cm2. As result, fabricated deep-ultraviolet LEDs exhibit an ultralow forward voltage 5.47 V at 30 A/cm2 33% increase in peak wall-plug efficiency.