Low-Temperature Synthesis of WSe2 by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible Reconfigurable Neurons

• DOI: 10.1021/acsami.3c18446
• Publication Date: 2024-04-18T20:39:02Z
• Authors: S. S. Teja Nibhan...; Anupam Roy; Sayema Chowdhury; Ryan Schalip; Matthew J. Coupin; Kevin C. Matthews; Md Hasibul Alam; Biswarup Satpati; Hema C. P. Movva; Christopher J. Luth; Siyu Wu; Jamie H. Warner; Sanjay K. Banerjee

Low-temperature large-area growth of two-dimensional (2D) transition-metal dichalcogenides (TMDs) is critical for their integration with silicon chips. Especially, if the temperatures can be lowered below back-end-of-line (BEOL) processing temperatures, Si transistors interface 2D devices (in back end) to enable high-density heterogeneous circuits. Such configurations are particularly useful neuromorphic computing applications where a dense network neurons interacts compute output. In this work, we present low-temperature synthesis (400 °C) tungsten diselenide (WSe2) via selenization W film under ultrahigh vacuum (UHV) conditions. This simple yet effective process yields large-area, homogeneous films TMDs, as confirmed by several characterization techniques, including reflection high-energy electron diffraction, atomic force microscopy, transmission and different spectroscopy methods. Memristors fabricated using grown WSe2 leveraged realize novel compact neuron circuit that reconfigured homeostasis.