Constructing Interfacial B–P Bonding Bridge to Promote S-Scheme Charge Migration within Heteroatom-Doped Carbon Nitride Homojunction for Efficient H2O2 Photosynthesis

• DOI: 10.1021/acsami.4c17246
• Publication Date: 2025-01-16T20:02:56Z
• Authors: Shahid Khan; Muhammad Adnan Qa...; Waqar Ahmad Qureshi; Ying Xu; Jinhe Li; Han Li; Lijuan Sun; Syed Najeeb-uz-Za...; Bicheng Zhu; Lele Wang; Weikang Wang; Qinqin Liu
• Keywords: Homojunction; Nanosheet; Carbon nitride; Graphitic carbon nitride; Charge carrier; Carbon fibers

The emerging step (S)-scheme heterojunction systems became a powerful strategy in promoting photogenerated charge separation while maintaining their high redox potentials. However, the weak interfacial interaction limits migration rate S-scheme heterojunctions. Herein, we construct unique carbon nitride (CN) homojunction with boron (B)-doped CN and phosphorus (P)-doped (B-CN/P-CN) for hydrogen peroxide (H2O2) photosynthesis. B-CN/P-CN nanosheet composites revealed extensively tight contact, improved visible-light harvesting, reduced carrier lifetime. structural investigation results also indicate that chemical B–P bonding is formed between B-CN P-CN nanosheets, inducing an accelerated migration. Density functional theory calculations further clarify transfer mechanism. Consequently, 2e– oxygen reduction reaction was predominant pathway of H2O2 production, facilitated by homojunction. optimal yield reached 2199.5 μmol L–1 h–1 over (S3) photocatalyst under monochromatic LED irradiation, increasing 2–8 times as against most C3N4 photocatalysts. This study highlights crucial role heterojunction/homojunction materials, accompanied unveiling mechanism solar-energy conversions.