Highly Stable Amorphous Metal Oxide Thin-Film Transistors for In Situ X-ray Tolerant Electronics

• DOI: 10.1021/acsami.4c21425
• Publication Date: 2025-02-18T17:04:41Z
• Authors: Dongwon Kang; Subin Jeon; Eun Chong Ju; Jeong-Wan Jo; Jaehyun Kim; Sung Kyu Park
• Keywords: Flexible Electronics; Oxide thin-film transistor

Thin-film transistors based on metal oxide semiconductors are essential for many unconventional electronic devices, such as flat panel displays, image sensors, medical detectors, and aerospace applications. However, the lack of a systemic understanding effects X-ray irradiation device often limits their use in harsh space heavy radiation environments. Here, we investigate thin-film amorphous indium gallium zinc (a-IGZO) tin (a-ZTO) semiconductors. Under increasing doses (1-7 kGy), a-IGZO TFTs exhibit substantial negative shift threshold voltage (ΔVth ≤ 16 V), indicating severe degradation switching behavior. The underlying mechanisms responsible this radiation-induced damage attributed to generation, ionization, compensation oxygen vacancies, which disrupted stability. In contrast, a-ZTO display markedly superior resilience 7.26 maintaining stable electrical performance under similar conditions. addition, both ex situ experimental results consistent trends terms stability devices irradiation, further validating reliability real-time hardness operational proposed elucidating difference tolerance between provide robustness metal-oxide-based extreme