Fabrication of Ultrasensitive Field-Effect Transistor DNA Biosensors by a Directional Transfer Technique Based on CVD-Grown Graphene

• DOI: 10.1021/acsami.5b03941
• Publication Date: 2015-07-23T13:28:35Z
• Authors: Chao Zheng; Le Huang; Hong Zhang; Zhongyue Sun; Zhiyong Zhang; Guo-Jun Zhang
• Keywords: Aptamer

Most graphene field-effect transistor (G-FET) biosensors are fabricated through a routine process, in which is transferred onto Si/SiO2 substrate and then devices subsequently produced by micromanufacture processes. However, such fabrication approach can introduce contamination the surface during lithographic resulting interference for subsequent biosensing. In this work, we have developed novel directional transfer technique to fabricate G-FET based on chemical-vapor-deposition- (CVD-) grown single-layer (SLG) applied biosensor sensitive detection of DNA. A FET device with six individual array sensors was first fabricated, SLG obtained CVD-growth method sensor manner. Afterward, peptide nucleic acid (PNA) covalently immobilized surface, DNA realized applying specific target PNA-functionalized biosensor. The able detect at concentrations as low 10 fM, 1 order magnitude lower than those reported previous work. addition, capable distinguishing complementary from one-base-mismatched noncomplementary simple, as-constructed shows ultrasensitivity high specificity, indicating its potential application disease diagnostics point-of-care tool.