Boosting Responsivity of Organic–Metal Oxynitride Hybrid Heterointerface Phototransistor

• DOI: 10.1021/acsami.6b02814
• Publication Date: 2016-05-19T22:34:09Z
• Authors: You Seung Rim; Kyung-Chul Ok; Yang Michael Yang; Huajun Chen; Sang-Hoon Bae; Chen Wang; Yu Huang; Jin-Seong Park; Yang Yang
• Keywords: Boosting; Photodiode

Amorphous metal oxides are attractive materials for various sensor applications, because of high electrical performance and easy processing. However, low absorption coefficient, slow photoresponse, persistent photoconductivity amorphous oxide films from the origin deep-level defects obstacles to their use as photonic applications. Here, we demonstrate ultrahigh photoresponsivity organic-inorganic hybrid phototransistors featuring bulk heterojunction polymers low-bandgap zinc oxynitride. Spontaneous formation ultrathin on surface oxynitride could make an effective band-alignment electron transfer dissociation excitons in heterojunction, while holes were blocked by deep highest occupied molecular orbital level oxide. These structure-based ultrasensitive broad-bandwidth photons ultraviolet near-infrared regions. The detectivity a linear dynamic range exceeded 10(12) Jones 122.3 dB, respectively.