Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors

• DOI: 10.1021/acsami.6b05724
• Publication Date: 2016-07-19T10:30:09Z
• Authors: Rawat Jaisutti; Jaeyoung Kim; Sung Kyu Park; Yong-Hoon Kim
• Keywords: Ultraviolet; Photocurrent

We report on highly stable amorphous indium-gallium-zinc oxide (IGZO) gas sensors for ultraviolet (UV)-activated room-temperature detection of volatile organic compounds (VOCs). The IGZO fabricated by a low-temperature photochemical activation process and exhibiting two orders higher photocurrent compared to conventional zinc sensors, allowed high sensitivity against various VOCs even at room temperature. From systematic analysis, it was found that increasing the UV intensity, sensitivity, response time, recovery behavior an sensor were strongly enhanced. In particular, under intensity 30 mW cm(-2), exhibited time 37%, 37 53 s, respectively, 750 ppm concentration acetone gas. Moreover, had excellent long-term stability showing around 6% variation in over 70 days. These results support conclusion solution-processed film can serve as good candidate emerging wearable electronics.