Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon

• DOI: 10.1021/acsami.6b05749
• Publication Date: 2016-07-25T15:50:17Z
• Authors: Vijay Parameshwaran; Xiaoqing Xu; Bruce Clemens
• Keywords: Morphology; Silicon nanowires

The growth conditions of two types indium-based III–V nanowires, InP and InN, are tailored such that instead yielding conventional wire-type morphologies, single-crystal conical structures formed with an enlarged diameter either near the base or tip. By using indium droplets as a catalyst, combined excess supply during growth, "ice cream cone" type nanowire "cone" cream" droplet on top for both InN. Surface polycrystallinity annihilation catalyst tip nanowires observed when is turned off process. This design technique extended to create InN same morphology. Conical obtained through use Au–In catalyst. Electrochemical studies silicon demonstrate reduction photocurrent proof photovolatic behavior provide insight how surface resulting interface affect these device-level properties. Additionally, photovoltage induced in silicon, which not replicated epitaxial thin films.