Enhanced Light Emission from Monolayer Semiconductors by Forming Heterostructures with ZnO Thin Films

• DOI: 10.1021/acsami.6b08003
• Publication Date: 2016-10-10T14:33:36Z
• Authors: Min Su Kim; Shrawan Roy; Jubok Lee; Byung Gu Kim; Hyun Kim; Ji-Hoon Park; Seok Joon Yun; Gang Hee Han; Jae-Young Leem; Jeongyong Kim
• Keywords: Light emission; Trion

Monolayer transition-metal dichalcogenides (1L-TMDs) are atomically thin direct band gap semiconductors, from which the emission of light is determined by optical transitions exciton complexes such as neutral excitons and trions. While quantum yields 1L-TMDs quite low, ability to control populations in through various doping processes an interesting advantage, provides ample possibilities for engineering properties these semiconductor monolayers. Here we demonstrate a simple method controlling trions enhance having them form heterostructures with ZnO films (TFs). 1Ls MoS2 or MoSe2 showed up 17-fold increases photoluminescence (PL) when they were placed on ∼50 nm thick TFs. This enhancement PL was due charge exchanges occurring 1L-TMD/ZnO interface. The enhancements changes spectra greater subjected 355 wavelength laser excitation than excited 514 laser, attributed onset energy transfer photoexcited and/or additional p-doping holes ZnO. phenomenon enhanced unambiguously visualized spatially resolved Raman spectral maps. Our approach using TF heterostructure suggests that rich variety options may be made available carrying out intuitive manipulations complexes, endeavors yield practical applications nanophotonic devices.