Parameter Space of Atomic Layer Deposition of Ultrathin Oxides on Graphene

• DOI: 10.1021/acsami.6b09596
• Publication Date: 2016-10-10T21:52:53Z
• Authors: Adrianus I. Aria; Kenichi Nakanishi; Long Xiao; Philipp Braeuning...; Abhay A. Sagade; Jack A. Alexander...; Stephan Hofmann
• Keywords: Deposition

Atomic layer deposition (ALD) of ultrathin aluminum oxide (AlOx) films was systematically studied on supported chemical vapor (CVD) graphene. We show that by extending the precursor residence time, using either a multiple-pulse sequence or soaking period, continuous AlOx can be achieved directly graphene standard H2O and trimethylaluminum (TMA) precursors even at high temperature 200 °C, without use surfactants other additional surface modifications. To obtain conformal nucleation, time >2s is needed, which not prohibitively long but sufficient to account for slow adsorption kinetics surface. In contrast, shorter results in heterogeneous nucleation preferential defect/selective sites These findings demonstrate careful control ALD parameter space imperative governing behavior CVD consider our have model system character rational two-dimensional (2D)/non-2D material process integration, relevant also interfacing device integration many emerging 2D materials.