Highly Conductive Cu–Cu Joint Formation by Low-Temperature Sintering of Formic Acid-Treated Cu Nanoparticles

Shear Strength
DOI: 10.1021/acsami.6b10280 Publication Date: 2016-11-17T16:44:04Z
ABSTRACT
Highly conductive Cu-Cu interconnections of SiC die with Ti/Ni/Cu metallization and direct bonded copper substrate for high-power semiconductor devices are achieved by the low-temperature sintering Cu nanoparticles a formic acid treatment. The joints formed via long-range process exhibited good electrical conductivity high strength. When sintered at 260 °C, nanoparticle layer low resistivity 5.65 μΩ·cm displayed shear strength 43.4 MPa. 320 decreased to 3.16 increased 51.7 microstructure analysis demonstrated that formation was realized metallurgical bonding contact interface between pad layer, densely composed polycrystals size hundreds nanometers. In addition, high-density twins were found in interior which contributed improvement performance joints. This technology is suitable operating under temperatures.
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