Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device

• DOI: 10.1021/acsami.6b15149
• Publication Date: 2017-01-23T18:22:11Z
• Authors: Dongjue Liu; Qiqi Lin; Zhigang Zang; Ming Wang; Peihua Wangyang; Xiaosheng Tang; Miao Zhou; Wei Hu
• Keywords: Non-Volatile Memory; Photoelectric effect

All-inorganic perovskite CsPbX3 (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible electrical application are relatively scarce, mainly due limitations low-temperature fabricating process. In this study, all-inorganic CsPbBr3 films were successfully fabricated at 75 °C through two-step method. The highly crystallized first employed resistive switching layer Al/CsPbBr3/PEDOT:PSS/ITO/PET structure for nonvolatile memory application. operations endurance performance demonstrated as-prepared random access possess reproducible reliable characteristics. Electrical reliability mechanical stability device further tested by robust current–voltage curves under different bending angles consecutive flexing cycles. Moreover, model formation rupture filaments was proposed explain effect. It believed that study will offer new setting design materials future stable electronic devices.