Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Room-Temperature-Processed Ga-Doped ZnO Nanoparticles as the Electron Transport Layer

• DOI: 10.1021/acsami.7b03262
• Publication Date: 2017-04-19T10:48:09Z
• Authors: Sheng Cao; Jinju Zheng; Jialong Zhao; Zuobao Yang; Chengming Li; Xinwei Guan; Weiyou Yang; Minghui Shang; Tom Wu
• Keywords: Quantum Efficiency; Solution process

Colloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently work function such films, spontaneous charge transfer occurs at QD/ZnO interface in a QD-LED, thus leading to reduced performance. Here, improve QD-LED performance, we prepared Ga-doped NPs low functions tailored band structures via room-temperature (RT) solution process without use bulky organic ligands. We found that between CdSe/ZnS QDs doped was significantly weakened incorporated Ga dopants. Remarkably, as-assembled QD-LEDs, ETLs, exhibited superior luminances up 44 000 cd/m2 efficiencies 15 cd/A, placing them among most red-light QD-LEDs ever reported. This discovery provides new strategy fabricating high-performance by using RT-processed which could be generalized efficiency other optoelectronic devices.