Monolayer Bismuthene-Metal Contacts: A Theoretical Study

• DOI: 10.1021/acsami.7b03833
• Publication Date: 2017-06-09T10:13:10Z
• Authors: Ying Guo; Feng Pan; Meng Ye; Xiaotian Sun; Yangyang Wang; Jingzhen Li; Xiuying Zhang; Han Zhang; Yuanyuan Pan; Zhigang Song; Jinbo Yang; Jing Lu
• Keywords: 0103 physical sciences; 01 natural sciences

Bismuthene, a bismuth analogue of graphene, has moderate band gap, high carrier mobility, topological nontriviality, stability at room temperature, an easy transferability, and is very attractive for electronics, optronics, spintronics. The electrical contact plays critical role in actual device. interfacial properties monolayer (ML) bismuthene with the metal electrodes spanning wide work function range field-effect transistor configuration are systematically studied first time by using both first-principles electronic structure calculations quantum transport simulations. ML always undergoes metallization upon six owing to strong interaction. According simulations, apparent metal-induced gap states (MIGSs) formed semiconductor-metal interface give rise Fermi-level pinning. As result, forms n-type Schottky Ir/Ag/Ti electron barrier heights (SBHs) 0.17, 0.22, 0.25 eV, respectively, p-type Pt/Al/Au hole SBHs 0.09, 0.16, 0.38 respectively. effective channel length transistors also significantly reduced MIGSs. However, MIGSs eliminated increased when graphene used as electrode, accompanied small SBH 0.06 eV (quasi-Ohmic contact). Hence, insight provided into bismuthene-metal composite systems guidance choice devices.