Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy

• DOI: 10.1021/acsami.7b10974
• Publication Date: 2017-10-16T13:34:03Z
• Authors: Hong Dong; Cheng Gong; Rafik Addou; Stephen McDonnell; Angelica Azcatl; Xiaoye Qin; Weichao Wang; Weihua Wang; Christopher L. Hi...; Robert M. Wallace
• Keywords: Contact resistance

MoS2, as a model transition metal dichalcogenide, is viewed potential channel material in future nanoelectronic and optoelectronic devices. Minimizing the contact resistance of metal/MoS2 junction critical to realizing MoS2-based In this work, Schottky barrier height (SBH) band structure high work function Pd on MoS2 have been studied by situ X-ray photoelectron spectroscopy (XPS). The analytical spot diameter XPS spectrometer about 400 μm, signal proportional detection area, so influence defect-mediated parallel conduction paths SBH does not affect measurement. charge redistribution detected characterization, which gives insight into physics suggests that interface engineering necessary lower for generation electronic applications.