Wavelength-Tunable Ultraviolet Electroluminescence from Ga-Doped ZnO Microwires

• DOI: 10.1021/acsami.7b14084
• Publication Date: 2017-11-01T10:54:34Z
• Authors: Yang Liu; Mingming Jiang; Gaohang He; Shunfang Li; Zhenzhong Zhang; Binghui Li; Haifeng Zhao; Chongxin Shan; Dezhen Shen
• Keywords: Ultraviolet; Blueshift

The usage of ZnO as active layers to fabricate hybrid heterojunction light-emitting diodes is expected be an effective approach for ultraviolet light sources. Individual microwires with controlled gallium (Ga) incorporation (ZnO/Ga MWs) have been fabricated via a chemical vapor deposition method. It found that the increasing Ga-incorporated concentration, near-band-edge (NBE) photoluminescence MWs blue-shifted gradually from 390 370 nm. Heterojunction comprising single ZnO/Ga and p-GaN fabricated. With injection currents, interfacial emissions can suppressed effectively typical NBE emission dominates electroluminescence (EL). In particular, Ga-doping dominant EL wavelengths MW-based 384 372 nm, blue shift ascribed Burstein-Moss effect induced by Ga incorporation. present work demonstrates feasibility optical band gap engineering potential application wavelength-tuning