Memristive Synapses with Photoelectric Plasticity Realized in ZnO1–x/AlOy Heterojunction

• DOI: 10.1021/acsami.8b01036
• Publication Date: 2018-02-01T10:58:48Z
• Authors: Dan-Chun Hu; Rui Yang; Li Jiang; Xin Guo
• Keywords: Neuromorphic engineering; Photoelectric effect; Photoconductivity; Memristor; Resistive touchscreen

With the end of Moore's law in sight, new computing architectures are urgently needed to satisfy increasing demands for big data processing. Neuromorphic with photoelectric learning capability good candidates energy-efficient recognition and classification tasks. In this work, artificial synapses based on ZnO1-x/AlOy heterojunction were fabricated plasticity was investigated. Versatile synaptic functions such as short-term/long-term plasticity, paired-pulse facilitation, neuromorphic depression emulated inherent persistent photoconductivity volatile resistive switching characteristics device. It is found that naturally formed AlOy layer provides traps photogenerated holes, resulting a significant effect. Moreover, can be attributed electron trapping/detrapping at trapping sites layer.