Hybrid Characteristics of MoS2 Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor

• DOI: 10.1021/acsami.8b10525
• Publication Date: 2018-09-05T15:30:46Z
• Authors: Hyeon Jung Park; Cheol-Joon Park; Jun Young Kim; Min Su Kim; Jeongyong Kim; Jinsoo Joo
• Keywords: Tetracene; Ambipolar diffusion; Pentacene

An n-type MoS2 monolayer grown by chemical vapor deposition method was partially hybridized with an organic semiconducting p-type tetracene thin film. The photoluminescence (PL) intensity in the hybrid region of MoS2/tetracene is clearly lower than that pristine because charge-transfer effect, which confirmed decrease exciton lifetimes. Decrease temperature led to blue-shift PL peak position layers and, consequently, intensities both and considerably increased owing phonon interaction. spectra bound excitons were observed at low temperatures, indicating formation trap states. lateral-type n-p heterojunction field-effect transistors (FETs) using as active layer showed gate-tunable rectification I- V anti-ambipolar characteristics hysteresis effect. charge transport across FET can be explained terms Shockley-Read-Hall trap-intermediated tunneling Langevin recombination mechanisms. To improve performance MoS2/tetracene-based FET, a dielectric hexagonal boron nitride (h-BN) inserted between SiO2 surface layer. We effect threshold voltage h-BN/MoS2/tetracene-based FETs due number traps interface. h-BN/MoS2/tetracene device also enhanced after annealing process.