Piezoelectric Effects in Surface-Engineered Two-Dimensional Group III Nitrides

• DOI: 10.1021/acsami.8b17341
• Publication Date: 2018-12-14T11:04:54Z
• Authors: Yaguang Guo; Huaiqiu Zhu; Qian Wang
• Keywords: Passivation; Metastability

Piezoelectric effects of two-dimensional (2D) group III-V compounds have received considered attention in recent years because their wide applications semiconductor devices. However, they face a problem that only metastable or unstable structures are noncentrosymmetric with piezoelectricity, thus leading to the difficulty experimental observation. Motivated by advances synthesis 2D III nitrides, this paper, for first time, we study piezoelectric properties nitrides (XN, X = Al, Ga, and In) buckled hexagonal configurations surface passivation, which thermodynamically stable. Unlike previously reported planar graphitic structure, demonstrate hydrogenated (H-XN-H, exhibit both in-plane out-of-plane monolayer multilayer under an external strain basal plane. We further elucidate underlying mechanism piezoelectricity analyzing correlations between coefficients structural, electronic, chemical properties. In addition, show H-F cofunctionalization not enhances stability, but also significantly improves ionic polarization charge redistribution, large F-XN-H. Our research materials would stimulate more theoretical efforts developing effective device applications.