Ultrafast Photovoltaic-Type Deep Ultraviolet Photodetectors Using Hybrid Zero-/Two-Dimensional Heterojunctions

• DOI: 10.1021/acsami.8b20357
• Publication Date: 2019-02-04T17:11:46Z
• Authors: Hao Kan; Wei Zheng; Richeng Lin; Min Li; Chen Fu; Huibin Sun; Mei Dong; Cunhua Xu; Jingting Luo; YongQing Fu; Feng Huang
• Keywords: Ultraviolet; Photoconductivity

Deep ultraviolet (DUV) photodetectors have wide-range applications in satellite communications, air purification, and missile-plume detection. However, the critical barriers for currently available wide-band gap semiconductor film-based DUV are their low efficiency, complicated processes, lattice mismatch with substrate. Quantum dot (QD) devices prepared using solution-based methods can solve these problems. so far, there no reports on photovoltaic-type QDs. In this study, we propose a novel methodology to construct hybrid zero-/two-dimensional photodetector (p-type graphene/ZnS QDs/4H-SiC) photovoltaic characteristics. The device exhibits excellent selectivity light has an ultrafast response speed (rise time: 28 μs decay 0.75 ms), which much better than those reported conventional photoconductive photodetectors.